d a t a sh eet product data sheet supersedes data of 2002 aug 09 2002 nov 22 discrete semiconductors bc817ds npn general purpose double transistor db ook, halfpage m3d302
2002 nov 22 2 nxp semiconductors product data sheet npn general purpose double transistor bc817ds features ? high current (500 ma) ? 600 mw total power dissipation ? replaces two sot23 packaged transistors on same pcb area. applications ? general purpose switching and amplification ? push-pull amplifiers ? multi-phase stepper motor drivers. description npn transistor pair in a sot457 (sc-74) plastic package. marking type number marking code bc817ds n3 pinning pin description 1, 4 emitter tr1; tr2 2, 5 base tr1; tr2 6, 3 collector tr1; tr2 handbook, halfpage 13 2 4 5 6 top view mam340 13 2 tr1 tr2 6 4 5 fig.1 simplified outline (sot457) and symbol. quick reference data symbol parameter max. unit v ceo collector-emitter voltage 45 v i c collector current (dc) 500 ma i cm peak collector current 1 a limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 2 . symbol parameter conditions min. max. unit per transistor unless otherwise specified v cbo collector-base voltage open emitter ? 50 v v ceo collector-emitter voltage open base ? 45 v v ebo emitter-base voltage open collector ? 5 v i c collector current (dc) ? 500 ma i cm peak collector current ? 1 a i bm peak base current ? 200 ma p tot total power dissipation t amb 25 c; note 1 ? 370 mw t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c t amb operating ambient temperature ? 65 +150 c per device p tot total power dissipation t amb 25 c; note 1 ? 600 mw
2002 nov 22 3 nxp semico nductors product data sheet npn general purpose doubl e transistor bc817ds thermal characteristics note 1. device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm 2 . characteristics t amb = 25 c unless otherwise specified. notes 1. pulse test: t p 300 s; 0.02. 2. v be decreases by approximately ? 2 mv/k with increa sing temperature. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 208 k/w symbol parameter conditions min. typ. max. unit per transistor i cbo collector-base cut-off current v cb = 20 v; i e = 0 ? ? 100 na v cb = 20 v; i e = 0; t j = 150 c ? ? 5 a i ebo emitter-base cut-off current v eb = 5 v; i c = 0 ? ? 100 na h fe dc current gain v ce = 1 v; i c = 100 ma; note 1 160 ? 400 v ce = 1 v; i c = 500 ma; note 1 40 ? ? v cesat collector-emitter sa turation voltage i c = 500 ma; i b = 50 ma; note 1 ? ? 700 mv v be base-emitter voltage v ce = 1 v; i c = 500 ma; notes 1 and 2 ? ? 1.2 v c c collector capacitance v cb = 10 v; i e = i e = 0; f = 1 mhz ? 5 ? pf f t transition frequency v ce = 5 v; i c = 10 ma; f = 100 mhz 100 ? ? mhz
2002 nov 22 4 nxp semico nductors product data sheet npn general purpose doubl e transistor bc817ds handbook, halfpage 0 500 100 200 300 400 mbl747 10 ? 1 11010 2 i c (ma) h fe 10 3 (3) (1) (2) fig.2 dc current gain as a function of collector current; typical values. v ce = 1 v. (1) t amb = 150 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage 010 1000 0 200 400 600 800 2468 v ce (v) i c (ma) mbl748 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) fig.3 collector current as a function of collector-emitter volt age; typical values. (1) i b = 15 ma. (2) i b = 13.5 ma. (3) i b = 12 ma. (4) i b = 10.5 ma. (5) i b = 9 ma. (6) i b = 7.5 ma. (7) i b = 6 ma. (8) i b = 4.5 ma. (9) i b = 3 ma. (10) i b = 1.5 ma. handbook, halfpage 10 3 10 2 10 mbl749 10 ? 1 110 i c (ma) v cesat (mv) 10 2 10 3 (1) (2) (3) fig.4 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 10. (1) t amb = 150 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage 200 1200 400 600 800 1000 mbl750 10 ? 1 110 i c (ma) v be (mv) 10 2 10 3 (1) (2) (3) fig.5 base-emitter voltage as a function of collector current; typical values. v ce = 1 v. (1) t amb = ? 55 c. (2) t amb = 25 c. (3) t amb = 150 c.
2002 nov 22 5 nxp semico nductors product data sheet npn general purpose doubl e transistor bc817ds package outline references outline version european projection issue date iec jedec eiaj sot457 sc-74 wb m b p d e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot45 7 unit a 1 b p cd e h e l p qy w v mm 0.1 0.013 0.40 0.25 3.1 2.7 0.26 0.10 1.7 1.3 e 0.95 3.0 2.5 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.6 0.2 0.33 0.23 a 1.1 0.9 97-02-28 01-05-04
2002 nov 22 6 nxp semico nductors product data sheet npn general purpose doubl e transistor bc817ds data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands 613514/02/pp7 date of release: 2002 nov 22 document order number: 9397 750 10582
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